IEC 60749-41-2020 SEMICONDUCTOR DEVICES – MECHANICAL AND CLIMATIC TEST METHODS – Part 41 : Standard reliability testing methods of non-volatile memory devices

IEC 60749-41-2020 SEMICONDUCTOR DEVICES – MECHANICAL AND CLIMATIC TEST METHODS – Part 41 : Standard reliability testing methods of non-volatile memory devices.
3.4 data pattern mix of several 1 s and 0s in the memory and their physical or logical positions Note 1 to entry: A device can be single-bit-per-cell (SBC), meaning that one physical memory cell stores a “0” or a “1 “, or multiple-bits-per-cell (MBC), meaning that one cell stores typically two bits of data: “00”, “01 “, “1 0”, or “1 1 “. In some MBC memories, the two bits represent logically-adjacent bit-pairs in each byte of data. For example, for 2 bits per cell, a byte containing binary data 1 01 1 0001 would correspond to four physical cells with data 2301 in base-four logic. In other MBC memories, the two bits can represent bits in entirely different address locations. For an SBC memory a physical checkerboard pattern consists of alternating 0s and 1 s, with each 0 surrounded by 1 s on either side and above and below; a logical checkerboard pattern consists of data bytes AAH or 55H in which each 0 is logically adjacent to 1 s. In some qualifications only logical positions are known.
3.5 endurance ability of a reprogrammable read-only memory to withstand data rewrites and still comply with applicable specifications Note 1 to entry: EEPROM device specifications often require an erase step before reprogramming data; in this case a data rewrite includes both erase and programming steps, which together are called a program/erase cycle. Direct-write memories allow data to be written directly over old, without an erase; in this case the use of the generic term “program/erase cycle” will refer to a single rewrite with no erase. For single-bit-per-cell (SBC) memories that require an erase step, one program/erase cycle consists of programming cells (typically to “0”) and then erasing (“1 “). For the comparable multiple-bits-per-cell (MBC) case, a cycle would consist of programming cells (to “0”, “1 “, or “2” for two bits per cell) and then erasing (“3” for two bits per cell).
Note 2 to entry: Endurance cycling consists of performing multiple rewrites in succession, and the data pattern or patterns for these rewrites must be chosen. There is no one data pattern or set of patterns that is worst-case for all failure mechanisms. For example, for floating-gate memories a fully programmed pattern is worst-case for charge transfer, but a physical checkerboard pattern is worst-case for spurious programming of adjacent cells, and a mostly erased pattern can be worst-case for mechanisms related to erase-preconditioning algorithms. For MBC memories, programming to the highest state is worst-case for charge transfer, but intermediate-state cells can experience more programming time and also have less sensing margin. Finally, in some memories, the margin of a cell is influenced by the data states of the physically adjacent cells.
3.6 endurance failure failure caused by endurance cycling Note 1 to entry: An endurance failure occurs if, as a result of program/erase cycling, an EEPROM fails to complete the program or erase operations within the datasheet-specified times or if it fails to meet any of its other datasheet requirements. A program operation that results in incorrect data being stored in the device counts as an endurance failure. However, if an error-management method such as an error-correction code is built into the device or specified to be applied by the system, then failure is taken to occur only if the error is not properly managed by the specified method.IEC 60749-41 pdf download.